Organic field-effect transistors (OFETs) of highly oriented films of dithiophene-tetrathiafulvalene prepared by zone casting

被引：46

作者：

Mas-Torrent, M. ^{[1
,2
]}

Masirek, S. ^{[3
]}

Hadley, P. ^{[2
,4
]}

Crivillers, N. ^{[1
]}

Oxtoby, N. S. ^{[1
]}

Reuter, P. ^{[4
]}

Veciana, J. ^{[1
]}

Rovira, C. ^{[1
]}

Tracz, A. ^{[3
]}

机构：

[1] Inst Ciencia Mat Barcelona, CSIC, Bellaterra 08193, Spain

[2] Delft Univ Technol, Kavli Inst NanoSci Delft, NL-2628 CJ Delft, Netherlands

[3] Polish Acad Sci, Ctr Mol & Macromol Studies, PL-90363 Lodz, Poland

[4] Graz Univ Technol, Inst Solid State Phys, A-8010 Graz, Austria

来源：

ORGANIC ELECTRONICS | 2008年 / 9卷 / 01期

关键词：

organic field-effect transistors; thin film; tetrathiafulvalene; X-ray diffraction;

D O I：

10.1016/j.orgel.2007.09.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the preparation of large area coverage of well-oriented films of dithiophene-tetrathiafulvalene (DT-TTF) from solution by using the zone casting technique. The X-ray analysis shows that the molecules are highly ordered in the films with the stacking direction parallel to the substrate. We further demonstrate that it is possible to prepare organic field-effect transistors (OFETs) employing these films. The devices reveal a remarkable OFET mobility with a maximum value of 0.17 cm(2)/V s. The fact that the films are prepared from solution makes these devices eminently suitable for low-cost electronics. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：143 / 148

页数：6

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