L/S-band 140W push-pull power AlGaAs/GaAs HFETs for digital cellular base stations

被引：4

作者：

Takenaka, I ^{[1
]}

Takahashi, H ^{[1
]}

Asano, K ^{[1
]}

Ishikura, K ^{[1
]}

Morikawa, J ^{[1
]}

Sato, K ^{[1
]}

Takano, I ^{[1
]}

Hasegawa, K ^{[1
]}

Tokunaga, K ^{[1
]}

Emori, F ^{[1
]}

Kuzuhara, M ^{[1
]}

机构：

[1] NEC Corp Ltd, ULSI Device Dev Labs, Otsu, Shiga 5200833, Japan

来源：

GAAS IC SYMPOSIUM - 20TH ANNUAL, TECHNICAL DIGEST 1998 | 1998年

关键词：

D O I：

10.1109/GAAS.1998.722633

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An L/S-band high-power and low-distortion AlGaAs/GaAs HFET amplifier has been developed. The amplifier employed two pairs of pre-matched GaAs chips mounted on a single package and the total output-power was combined in push-pull configuration with a microstrip balun circuit. The developed amplifier demonstrated state-of-the-art performance of 140W output-power with 11.5dB linear gain at 2.2GHz. In addition, it exhibited extremely low distortion performance, which is suitable for digital cellular base station system applications.

引用

页码：81 / 84

页数：4