Polysilicon TFT AM-OLED on thin flexible metal substrates

被引:13
作者
Afentakis, T [1 ]
Hatalis, M [1 ]
机构
[1] Lehigh Univ, ECE Dept, Display Res Lab, Bethlehem, PA 18015 USA
来源
POLY-SILICON THIN FILM TRANSISTOR TECHNOLOGY AND APPLICATIONS IN DISPLAYS AND OTHER NOVEL TECHNOLOGY AREAS | 2003年 / 5004卷
关键词
D O I
10.1117/12.482577
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Thin metal foils present an excellent alternative to polymers for the fabrication of large area, flexible displays. Their main advantage spurs from their ability to withstand higher temperatures during processing; microelectronic fabrication at elevated temperatures offers the ability to utilize a variety of crystallization processes for the active layer of devices and thermally grown gate dielectrics. This can lead to high performance (high mobility, low threshold voltage), low cost and highly reliable thin film transistors. In some cases, the conductive substrate can also be used to provide power to the active. devices, thus reducing layout complexity.
引用
收藏
页码:187 / 191
页数:5
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