Constant Current Charge-to-breakdown: still a valid tool to study the reliability of MOS structures?

被引：73

作者：

Nigam, T ^{[1
]}

Degraeve, R ^{[1
]}

Groeseneken, G ^{[1
]}

Heyns, MM ^{[1
]}

Maes, HE ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL | 1998年

关键词：

D O I：

10.1109/RELPHY.1998.670444

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is demonstrated that the conventional interpretation of constant current Q(BD) to evaluate the influence of process variations on the reliability of MOS-structures can lead to erroneous conclusions. For a fixed thickness, the comparison of Q(BD)-distributions of all processes that affect the breakdown statistics becomes even meaningless. For ultra-thin oxides,the impact of different processing conditions requires constant gate voltage instead of constant current density Q(BD)-tests.

引用

页码：62 / 69

页数：8