Effect of gas adsorption on the surface structure of β-Ga2O3 studied by XPS and conductivity measurements

被引：29

作者：

Josepovits, VK ^{[1
]}

Krafcsik, O ^{[1
]}

Kiss, G ^{[1
]}

Perczel, IV ^{[1
]}

机构：

[1] Tech Univ Budapest, Dept Atom Phys, H-1111 Budapest, Hungary

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1998年 / 48卷 / 1-3期

基金：

匈牙利科学研究基金会;

关键词：

gas adsorption; beta-Ga2O3; conductivity measurements;

D O I：

10.1016/S0925-4005(98)00073-2

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this work the mechanism of oxygen adsorption on n-type beta-Ga2O3 oxide semiconductor-examined in large temperature range-is discussed based on the results of XPS and electric conductivity measurements. On one hand the effect of the adsorbed charged particles was investigated on the conductivity of the semiconductor layer, while on the other hand on the core level binding energy of oxygen and gallium. According to the former SIMS (Secondary Ion Mass Spectrometry) results the potential barrier of the depletion layer caused by the adsorbed negative ions on the surface is so high that it hinders the formation of negative secondary ions in the 450-650 degrees C temperature range. The present results suggest the dominance of O- ion adsorption compared with that of O-2(-) ions. The adsorption properties of beta-Ga2O3 were also examined at lower temperatures (20-200 degrees C). (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：373 / 375

页数：3