A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN

被引：10

作者：

Bright, AN ^{[1
]}

Tricker, DM

Humphreys, CJ

Davies, R

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge, England

[2] Marconi Caswell Ltd, Towcester, Northants, England

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 03期

关键词：

ohmic contacts; GaN; TEM; n-type;

D O I：

10.1007/s11664-001-0030-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al(200 nm)/Ti(20 nm)/n-GaN contacts have been studied using transmission electron microscopy (TEM) and the resulting microstructures correlated with the observed variation in specific contact resistance (rho (c)). A minimum rho (c) value of 7 x 10(-7) Omega cm(2) was obtained after annealing at 550 degreesC for 1 min in argon. Bulk metal and interfacial phases have been characterized, and explanations for the observed electrical behavior are proposed. A transition from TiN to AIN at the interface occurs between 650 degreesC and 700 degreesC.

引用

页码：L13 / L16

页数：4

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