Ion beam measurements of Sn/In ratios in indium tin oxide films prepared by pulsed-laser deposition

被引：4

作者：

Ren, XT

Huang, MB ^{[1
]}

Amadon, S

Lanford, WA

Paliza, MAM

Feldman, LC

机构：

[1] SUNY Albany, Dept Phys, Albany, NY 12222 USA

[2] SUNY Albany, Accelerator Lab, Albany, NY 12222 USA

[3] Peking Univ, Inst Heavy Ion Phys, Beijing 100871, Peoples R China

[4] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[5] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 174卷 / 1-2期

关键词：

PIXE; high-resolution Rutherford backscattering; indium tin oxide (ITO) film; Sn/In ratio;

D O I：

10.1016/S0168-583X(00)00437-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ion beam techniques have been applied to determine the tin-to-indium ratio in indium tin oxide (ITO) films prepared by pulsed-laser deposition (PLD). Particle induced X-ray emission (PIXE) and high-resolution Rutherford backscattering (HRRBS) using a magnetic spectrometer were carried out on various ITO samples. Both techniques agreed within experimental errors. This work suggests that PIXE and HRRBS are applicable for analysis of high-Z elements in thin films, providing valuable information for material synthesis. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：187 / 193

页数：7

共 11 条

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