New compounds with MgAgAs-type structure: NbIrSn and NbIrSb

被引：33

作者：

Hohl, H

Ramirez, AP

Goldmann, C

Ernst, G

Wolfing, B

Bucher, E

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[2] Univ Konstanz, Fak Phys, Fach X910, D-78457 Constance, Germany

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1998年 / 10卷 / 35期

关键词：

D O I：

10.1088/0953-8984/10/35/016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

NbIrSn and NbIrSb crystallize in a cubic MEAgAs-type structure with lattice parameters of 617.76(2) and 614.97(2) pm, respectively. Both compounds exhibit incongruent melting behaviour. NbIrSn is a p-type semiconductor with an energy gap of 0.28 eV. At room temperature, it has a Seebeck coefficient of +176 mu V K-1 and a resistivity of 1.1 Omega cm. NbIrSb is metallic with S = +3.5 mu V K-1 and rho = 1.5 x 10(-3) Omega cm at room temperature. The formation of the solid solutions NbIrSn1-xSbx has been confirmed.

引用

页码：7843 / 7850

页数：8

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