Weak backscattering in defected doped carbon nanotubes

被引:6
作者
Lu, SY [1 ]
Hsu, WK [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
关键词
boron; backscattering; nanotubes; resistance; semiconductors;
D O I
10.1002/cphc.200500043
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 [物理化学]; 081704 [应用化学];
摘要
[No abstract available]
引用
收藏
页码:1040 / 1042
页数:3
相关论文
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