Solid-state field-controlled emitters: a thin-film technology solution for industrial cathodes

被引：15

作者：

Binh, VT ^{[1
]}

Dupin, JP

Adessi, C

Semet, V

机构：

[1] Univ Lyon 1, DPM URA CNRS, Lab Emiss Elect, F-69622 Villeurbanne, France

[2] Univ Franche Comte, Phys Mol Lab, F-25030 Besancon, France

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 06期

关键词：

electron emission; cold cathodes; Schottky junction; low electron affinity surface; negative electron affinity surface;

D O I：

10.1016/S0038-1101(00)00217-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental measurements have shown that uniform and stable electron emission is obtained from metallic planar surfaces covered with an ultra-thin wide band-gap semiconductor (UTSC) layer, with a threshold of the applied field in the range of 50 V mum(-1) and at 300 K. Numerical simulation analysis of a serial two-step mechanism model has been developed. The theoretical results confirm the main experimental characteristics and showed that a band bending of approximate to 5 eV is obtained for an UTSC layer thickness in the range of 3-7 nm. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1025 / 1031

页数：7

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