A study for thermoelectric properties of Ni doped SiC sintered thermoelectric semiconductor

被引：3

作者：

Okamoto, Y ^{[1
]}

Kato, K ^{[1
]}

Morimoto, J ^{[1
]}

Miyakawa, T ^{[1
]}

机构：

[1] Natl Def Acad, Dept Mat Sci & Engn, Yokosuka, Kanagawa 239, Japan

来源：

PROCEEDINGS ICT'97 - XVI INTERNATIONAL CONFERENCE ON THERMOELECTRICS | 1997年

关键词：

D O I：

10.1109/ICT.1997.667093

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

The thermoelectric properties Of the p-type SiC/Ni sintered thermoelectric semiconductor have been studied as functions of Ni concentration (from 0.5 wt.% to 5.0 wt.%) and temperature (from RT to 700 degrees C). The electrical resistivity decreases drastically for all Ni concentration range compared with other dopants such as Cu, Al and B at room temperature. The electrical resistivity and thermoelectric power decrease with increase temperature. The value of figure of merit Z approaches to 1.4x10(-4) at around 700 degrees C. The condition of the doped impurity atom Ni has been also studied by magnetically. It is confirmed that Ni does not segregate in the SIC sintered sample. We conclude that Ni well diffused into SiC and it is one of the most effective dopant far SiC based thermoelectric materials.

引用

页码：236 / 239

页数：4