Device simulation of a unipolar gamma-ray detector

被引：7

作者：

Lee, EY ^{[1
]}

Lund, JC ^{[1
]}

Hilton, NR ^{[1
]}

Brunett, BA ^{[1
]}

James, RB ^{[1
]}

机构：

[1] Sandia Natl Labs, Livermore, CA 94551 USA

来源：

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II | 1997年 / 487卷

关键词：

D O I：

10.1557/PROC-487-537

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The pulse height spectra from a new kind of unipolar gamma-ray detectors were predicted using a new three-dimensional simulation program developed at Sandia National Laboratories. The detectors were fabricated at Sandia and RMD Inc., and tested at Sandia. They were fabricated from Cd1-xZnxTe crystals and they were electron-transport-only devices. For the simulation, a successive overrelaxation method was used to determine the three-dimensional internal electric field within a detector, and to find the weighting potentials for the anode and the cathode. Uniform irradiation and ionization from a Cs-137 source was assumed, and the charge transport and the signal induction within the detector were numerically computed using the appropriate materials and design parameters. The simulation gave excellent agreement with experimental pulse height spectra, and it demonstrated the power of such a simulation to correlate the materials parameters and the device design to the actual detector performance.

引用

页码：537 / 543

页数：7