Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applications

被引：40

作者：

Behet, M

van der Zanden, K

Borghs, G

Behres, A

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Rhein Westfal TH Aachen, Inst Halbleitertech 1, D-52056 Aachen, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 19期

关键词：

D O I：

10.1063/1.122582

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Modulation-doped In0.5Ga0.5As/In0.5Al0.5As quantum well structures grown by molecular beam epitaxy on GaAs substrates using a relaxed AlGaAsSb buffer showed carrier mobilities of 8500 cm(2)/V s for sheet concentration of 3.5x10(12) cm(-2) at room temperature. The crystallinity of the quaternary buffer layer was verified by x-ray diffractometry. Transistors with 0.25x100 mu m(2) gates demonstrated transconductance values as high as 800 mS/mm. S-parameter measurements revealed a cutoff frequency f(T) of 87 GHz and a maximum oscillation frequency f(MAX) of 140 GHz (both extrinsic values). (C) 1998 American Institute of Physics. [S0003-6951(98)00245-9].

引用

页码：2760 / 2762

页数：3

共 4 条

[1] High-transconductance delta-doped InAs/AlSb HFET's with ultrathin silicon-doped InAs quantum well donor layer [J].