Gallium nitride synthesis using lithium metal as a nitrogen fixant

被引:13
作者
Barry, ST
Ruoff, SA
Ruoff, AL [1 ]
机构
[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[2] Crystal Syst Cpds, Freeville, NY 13068 USA
关键词
D O I
10.1021/cm980021g
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Micron-sized particles of gallium nitride were synthesized at temperatures as low as 300 degrees C under ammonia in anhydrous conditions. Two different syntheses were investigated: compound 1 was synthesized using a physical mixture of gallium and lithium under flowing ammonia; compound 2 was synthesized using a gallium/lithium alloy under flowing ammonia. These two methods relied on the presence of lithium metal acting as a nitrogen-fixing and transport agent for metallic gallium. Powder X-ray diffraction demonstrated the purity and crystalline nature of the resulting white gallium nitride; it was found to exhibit extraordinary crystallinity considering its formation conditions. Elemental analysis also determined the purity of 1 and 2 and showed an absence of the lithium impurity in the former, as contrasted with 0.23% Li in the latter. SEM demonstrated the particle sizes of 1 and 2 to be on the micron scale.
引用
收藏
页码:2571 / 2574
页数:4
相关论文
共 18 条
  • [1] Low pressure synthesis of bulk, polycrystalline gallium nitride
    Argoitia, A
    Hayman, CC
    Angus, JC
    Wang, L
    Dyck, JS
    Kash, K
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (02) : 179 - 181
  • [2] Synthesis routes and characterization of high-purity, single-phase gallium nitride powders
    Balkas, CM
    Davis, RF
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1996, 79 (09) : 2309 - 2312
  • [3] DESIGNATED MOLECULAR DECONSTRUCTION - THE FACILE TRANSFORMATION OF GA(N(SIME3)2)(OSIME3)2PY (PY = PYRIDINE) TO GAN
    BARRY, ST
    RICHESON, DS
    [J]. CHEMISTRY OF MATERIALS, 1994, 6 (12) : 2220 - 2221
  • [4] Cotton F. A., 1980, ADV INORGANIC CHEM
  • [5] On GaN crystallization by ammonothermal method
    Dwilinski, R
    Baranowski, JM
    Kaminska, M
    Doradzinski, R
    Garczynski, J
    Sierzputowski, L
    [J]. ACTA PHYSICA POLONICA A, 1996, 90 (04) : 763 - 766
  • [6] GROWTH AND MORPHOLOGY OF GAN
    EJDER, E
    [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 22 (01) : 44 - 46
  • [7] *GAN JOINT COMM PO, 021078 GAN JOINT COM
  • [8] Nitrogen compounds of gallium III Gallic nitride
    Johnson, WC
    Parsons, JB
    Crew, MC
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1932, 36 (07) : 2651 - 2654
  • [9] EQUILIBRIUM PRESSURE OF N-2 OVER GAN AND HIGH-PRESSURE SOLUTION GROWTH OF GAN
    KARPINSKI, J
    JUN, J
    POROWSKI, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) : 1 - 10
  • [10] The microstructure of gallium nitride monocrystals grown at high pressure
    Leszczynski, M
    Grzegory, I
    Teisseyre, H
    Suski, T
    Bockowski, M
    Jun, J
    Baranowski, JM
    Porowski, S
    Domagala, J
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 169 (02) : 235 - 242