Fifty centimeter ion beam source

被引:20
作者
Hayes, AV
Kanarov, V
Vidinsky, B
机构
[1] Veeco Instruments Inc., Plainview, NY 11803
关键词
D O I
10.1063/1.1146907
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A 50-cm-diam ion source and its industrial applications are described. This is the largest commercial ion source presently available for ion beam etching and deposition over a full 20 in. diam. It has been used to generate beams of argon ions at 300-900 eV of ion energy and beam currents of 1-5 A with standard filament-type cathodes. Operation at even higher current levels is possible with high emissivity hollow cathodes. A presentation of general performance characteristics of the ion source is given and some of the special considerations required for reliable and cost-effective operation of large scale ion beam systems are discussed. To illustrate the application of this source, a brief description of a fully automatic production ion beam etching system developed around this ion source is given along with a description of the etch results. This system can simultaneously etch a batch of five B-in.-diam wafers with etch rates of nickel-iron exceeding 500 A/min. The etch uniformity is excellent. (C) 1996 American Institute of Physics.
引用
收藏
页码:1638 / 1641
页数:4
相关论文
共 6 条
[1]   ION-BEAM DIVERGENCE CHARACTERISTICS OF 2-GRID ACCELERATOR SYSTEMS [J].
ASTON, G ;
KAUFMAN, HR ;
WILBUR, PJ .
AIAA JOURNAL, 1978, 16 (05) :516-524
[2]  
BEATTIE JR, 1983, CR168259 NASA
[3]  
HAYES A, 1995, DATA STORAGE, V2, P42
[4]  
LAKIOS E, 1990, Patent No. 4949883
[5]  
PATTERSON MJ, 1988, 101292 NASA
[6]  
RAWLIN VK, 1989, 102143 NASA