Atomic layer deposition- and chemical vapor deposition-TiN top electrode optimization for the reliability of Ta2O5 and Al2O3 metal insulator silicon capacitor for 0.13 μm technology and beyond

被引：10

作者：

Lim, HS ^{[1
]}

Kang, SB ^{[1
]}

Jeon, IS ^{[1
]}

Choi, GH ^{[1
]}

Park, YW ^{[1
]}

Lee, SI ^{[1
]}

Moon, JT ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Ctr, Yongin 440900, Kyungkido, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 4B期

关键词：

reliability; Ta2O5; Al2O3; MIS; chlorine; step coverage; TiN; ALD; CVD; TDDB; XPS; V-p;

D O I：

10.1143/JJAP.40.2669

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TiCl4-based atomic layer deposition (ALD)- and chemical vapor deposition (CVD)-TiN films are applied as the metal top electrode for Ta2O5 and Al2O3 metal insulator silicon (MIS) capacitor. The effects of factors such as CI content, step coverage, deposition temperature of the TiN top electrode processes and pre-NH3 flushing on the electrical properties and reliability of the Ta2O5 and Al2O3 MIS capacitor are studied. Among these factors, poor step coverage shows distinctly degraded electrical properties of MIS capacitor, and high deposition temperature of TiN processes also degraded electrical properties, particularly those of Ta2O5. Although similar capacitance and leakage characteristics are measured with high chlorine content and pre-NH3 flushing, TiN processes, a difference in the orders of magnitude is observed in time dependent dielectric breakdown (TDDB) measurements. Regarding the deposition temperature and pre-NH3 flushing effect, the electrical and TDDB characteristics of Ta2O5 degrade even more severely than those of Al2O3. Degradation of TDDB in TiN films with NH3 flushing prior to deposition is attributed to the reduction effect of the dielectric material by NH3 gas. Based on the X-ray photoelectron spectroscopy (XPS) analysis results, Al2O3 is chemically more inert than Ta2O5. In addition, the degradation of TDDB characteristics is directly correlated to the early generation of V-p-dependent solid "0" fail bit counts. Due to the relatively low deposition temperature as well as to the excellent step coverage and low resistivity, the ALD-TiN process is ideal for enhancing the reliability of a MIS capacitor.

引用

页码：2669 / 2673

页数：5

共 8 条

[1]

Byeon S. G., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P722, DOI 10.1109/IEDM.1988.32914

[2]

Chang JP, 1999, SOLID STATE TECHNOL, V42, P43

[3] Low temperature processing of conformal TiN by ACVD (Advanced Chemical Vapor Deposition) for multilevel metallization in high density ULSI devices [J].

Kang, SB ;

Chae, YS ;

Yoon, MY ;

Leem, HS ;

Park, CS ;

Lee, SI ;

Lee, MY .

PROCEEDINGS OF THE IEEE 1998 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 1998, :102-104

[4] Interfacial reaction in the poly-Si/Ta2O5/TiN capacitor system [J].

Lee, HJ ;

Sinclair, R ;

Lee, MB ;

Lee, HD .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (01) :139-144

[5] Electrical characterization of CVD TiN upper electrode for Ta2O5 capacitor [J].

Lee, MB ;

Lee, HD ;

Park, BL ;

Chung, UI ;

Koh, YB ;

Lee, MY .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :683-686

[6] OPTIMUM ELECTRODE MATERIALS FOR TA2O5 CAPACITORS FOR HIGH-TEMPERATURE AND LOW-TEMPERATURE PROCESSES [J].

MATSUHASHI, H ;

NISHIKAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (3A) :1293-1297

[7] Novel MIS Al2O3 capacitor as a prospective technology for Gbit DRAMs [J].

Park, IS ;

Lee, BT ;

Choi, SJ ;

Im, JS ;

Lee, SH ;

Park, KY ;

Lee, JW ;

Hyung, YW ;

Kim, YK ;

Park, HS ;

Park, YW ;

Lee, SI ;

Lee, MY .

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2000, :42-43

[8]

Saitoh M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P680

← 1 →