Colossal magnetoresistive manganite-based ferroelectric field-effect transistor on Si

被引：75

作者：

Zhao, T ^{[1
]}

Ogale, SB

Shinde, SR

Ramesh, R

Droopad, R

Yu, J

Eisenbeiser, K

Misewich, J

机构：

[1] Univ Maryland, Mat Res Sci & Engn Ctr, College Pk, MD 20742 USA

[2] Motorola Labs, Phys Sci Res Labs, Tempe, AZ 85284 USA

[3] Brookhaven Natl Lab, Dept Mat Sci, Upton, NY 11973 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 05期

关键词：

D O I：

10.1063/1.1644321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An all-perovskite ferroelectric field-effect transistor with a ferroelectric Pb(Zr0.2Ti0.8)O-3 (PZT) gate and a colossal magnetoresistive La0.8Ca0.2MnO3 (LCMO) channel has been successfully fabricated by pulsed-laser deposition on Si. A clear and square channel resistivity hysteresis loop, commensurate with the ferroelectric hysteresis loop of PZT, is observed. A maximum modulation of 20% after an electric field poling of 1.5x10(5) V/cm, and 50% under a magnetic field of 1 T, are achieved near the metal-insulator transition temperature of the LCMO channel. A data retention time of at least one day is measured. The effects of electric and magnetic fields on the LCMO channel resistance are discussed within the framework of phase separation scenario. (C) 2004 American Institute of Physics.

引用

页码：750 / 752

页数：3

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