Magnetic and electric properties of vanadium doped ZnO films

被引：391

作者：

Saeki, H ^{[1
]}

Tabata, H ^{[1
]}

Kawai, T ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

来源：

SOLID STATE COMMUNICATIONS | 2001年 / 120卷 / 11期

关键词：

thin films; epitaxy; impurities in semiconductors; electronic transport; exchange and superexchange;

D O I：

10.1016/S0038-1098(01)00400-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Vanadium doped ZnO films (n-type Zn1-xVxO (x = 0.05-0.15)) were formed on sapphire substrates using a pulsed laser deposition technique, and their magnetic and electric properties were examined. Some of the V doped ZnO films exhibited ferromagnetic behavior with a Curie temperature higher than 350 K. The magnetic properties of V doped ZnO films were found to depend on the concentration of V ions and carriers. The results of optical transmission spectra indicated that they were transparent ferromagnets at room temperature. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：439 / 443

页数：5

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