Interface charge relaxation in ZnS:Mn based alternating-current thin-film electroluminescent devices

被引：4

作者：

Goldenblum, A ^{[1
]}

Oprea, A ^{[1
]}

机构：

[1] Natl Inst Mat Phys, Bucharest, Romania

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 11期

关键词：

D O I：

10.1063/1.368958

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The relaxation process of accumulated carriers on the anode interface of a metal-insulator-semiconductor-insulator-metal structure is investigated. It is studied by measuring the dependence of the transferred charge on the time interval between the voltage trapezoidal pulses. The presence of two independent relaxation channels is evidenced. This aspect of the relaxation process is incorporated in a model that describes the entire charge transfer process. A good fit between the computed data and the experimental ones is found for different maximum voltage and rising slope values. A possible mechanism for the relaxation of the interface accumulated carriers is discussed. (C) 1998 American Institute of Physics. [S0021-8979(98)10423-1].

引用

页码：6330 / 6336

页数：7

共 16 条

[1] EVIDENCE FOR BAND-TO-BAND IMPACT IONIZATION IN EVAPORATED ZNS-MN ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES [J].