Ballistic electron focusing by elliptic reflecting barriers

被引：16

作者：

Heremans, JJ ^{[1
]}

von Molnár, S

Awschalom, DD

Gossard, AC

机构：

[1] Florida State Univ, MARTECH, Tallahassee, FL 32306 USA

[2] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 09期

关键词：

D O I：

10.1063/1.123524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate reflection of ballistic electrons off an elliptic barrier in a high quality AlGaAs/GaAs heterostructure. Electrons injected at one focal point of an ellipse are collected at the second focal point, or at the midpoint. Application of a magnetic field perpendicular to the plane of the ellipse modifies the focusing effects by distorting the electrons' paths, resulting in a novel four-terminal negative magnetoresistance phenomenon. Several secondary features in the magnetoresistance are observed and are interpreted in the light of numerical path simulations. (C) 1999 American Institute of Physics. [S0003-6951(99)03809-7].

引用

页码：1281 / 1283

页数：3

共 13 条

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