Dislocation scattering in GaN

被引：420

作者：

Look, DC ^{[1
]}

Sizelove, JR

机构：

[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[2] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.82.1237

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A theory of charged-dislocation-line scattering is developed within the framework of the Boltzmann transport equation. A fit of the theory to temperature-dependent Hall-effect data in GaN gives dislocation densities which are in excellent agreement with those measured by transmission electron microscopy. This work shows that threading edge dislocations in GaN indeed are electrically active, in agreement with recent theoretical predictions. [S0031-9007(98)08378-1].

引用

页码：1237 / 1240

页数：4

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