Femtosecond laser excitation dynamics of the semiconductor-metal phase transition in VO2

被引:78
作者
Becker, MF [1 ]
Buckman, AB [1 ]
Walser, RM [1 ]
Lepine, T [1 ]
Georges, P [1 ]
Brun, A [1 ]
机构
[1] UNIV PARIS 11,CNRS,URA 14,INST OPT THEOR & APPL,F-91403 ORSAY,FRANCE
关键词
D O I
10.1063/1.361167
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have measured the subpicosecond optical response of a solid-state, semiconductor-to-metal phase transition excited by femtosecond laser pulses. We have determined the dynamic response of the complex refractive index of polycrystalline VO2 thin-films by making pump-probe optical transmission and reflection measurements at 780 nm. The phase transition was found to be largely prompt with the optical properties very close to the high-temperature metallic state being attained within about 5 ps. The equilibration of the metallic state after femtosecond excitation was modeled by non-exponentially decaying perturbations in the metallic state electron density and collision frequency. The decay of both these plasma parameters was well fit by a 1/root t time dependence. This indicated that a diffusion process governed the equilibration of the metallic phase of VO2. (C) 1996 American Institute of Physics.
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收藏
页码:2404 / 2408
页数:5
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