Interband spectroscopy of p-type GaAs/(Al,Ga)As quantum wells at low hole densities

被引：8

作者：

Cole, BE

Takamasu, T

Takehana, K

Goldhahn, R

Schulze, D

Kido, G

Chamberlain, JM

Gobsch, G

Henini, M

Hill, G

机构：

[1] Natl Res Inst Met, Tsukuba, Ibaraki 305, Japan

[2] Tech Univ Ilmenau, Inst Phys, D-98684 Ilmenau, Germany

[3] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England

[4] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

PHYSICA B-CONDENSED MATTER | 1998年 / 249卷

关键词：

Fermi-edge singularity; charged excitons; two-dimensional hole systems;

D O I：

10.1016/S0921-4526(98)00247-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoluminescence, excitation, electroreflectance and direct reflectance spectroscopy have been used to study the interband transitions in a number of modulation doped, p-type GaAs/(Al,Ga)As quantum wells. Gated samples enable a wide range of hole densities to be studied. A 150 Angstrom 'wide' quantum well sample illustrates the quenching of the neutral heavy- and light-hole exciton features, in the presence of a Fermi sea, and a transition to a charged exciton ground state (and lighl-hole,heavy-hole, electron bound complex). Different behaviour is found in the absorption Features of the narrow (70-85 Angstrom) quantum wells; while the charged exciton forms the ground-state threshold for photon absorption, we find the neutral exciton shifts up in energy with increasing Fermi energy. The magnitude of this blue shift is between three and four times the Fermi energy and is observed for both the heavy- and light-hole exciton. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：607 / 611

页数：5

共 14 条

[1] EXCITONS IN THE QUASI-2-DIMENSIONAL ELECTRON-GAS [J].

BAUER, GEW .

PHYSICAL REVIEW B, 1992, 45 (16) :9153-9162

[2] Mobile excitons and Fermi edge singularities in an interacting 2D electron gas [J].

Brum, JA ;

Brown, S ;

Hawrylak, P ;

Young, JF ;

Wasilewski, Z .

SURFACE SCIENCE, 1996, 361 (1-3) :424-427

[3] ELECTRON-CONCENTRATION-DEPENDENT QUANTUM-WELL LUMINESCENCE - EVIDENCE FOR A NEGATIVELY CHARGED EXCITON [J].

BUHMANN, H ;

MANSOURI, L ;

WANG, J ;

BETON, PH ;

MORI, N ;

EAVES, L ;

HENINI, M ;

POTEMSKI, M .

PHYSICAL REVIEW B, 1995, 51 (12) :7969-7972

[4] Cyclotron resonance in ultra-low-hole-density narrow p-type GaAs/(Al,Ga)As quantum wells [J].

Cole, BE ;

Chamberlain, JM ;

Henini, M ;

Cheng, T ;

Batty, W ;

Wittlin, A ;

Perenboom, JAAJ ;

Ardavan, A ;

Polisski, A ;

Singleton, J .

PHYSICAL REVIEW B, 1997, 55 (04) :2503-2511

[5] Exciton properties in p-type GaAs/AlxGa1-xAs quantum wells in the high doping regime [J].

Ferreira, AC ;

Holtz, PO ;

Sernelius, BE ;

Buyanova, I ;

Monemar, B ;

Mauritz, O ;

Ekenberg, U ;

Sundaram, M ;

Campman, K ;

Merz, JL ;

Gossard, AC .

PHYSICAL REVIEW B, 1996, 54 (23) :16989-16993

[6] OPTICAL SPECTROSCOPY OF A 2-DIMENSIONAL ELECTRON-GAS NEAR THE METAL-INSULATOR-TRANSITION [J].

FINKELSTEIN, G ;

SHTRIKMAN, H ;

BARJOSEPH, I .

PHYSICAL REVIEW LETTERS, 1995, 74 (06) :976-979

[7] OPTICAL-PROPERTIES OF A 2-DIMENSIONAL ELECTRON-GAS - EVOLUTION OF SPECTRA FROM EXCITONS TO FERMI-EDGE SINGULARITIES [J].

HAWRYLAK, P .

PHYSICAL REVIEW B, 1991, 44 (08) :3821-3828

[8] OBSERVATION OF NEGATIVELY CHARGED EXCITONS X- IN SEMICONDUCTOR QUANTUM-WELLS [J].

KHENG, K ;

COX, RT ;

DAUBIGNE, YM ;

BASSANI, F ;

SAMINADAYAR, K ;

TATARENKO, S .

PHYSICAL REVIEW LETTERS, 1993, 71 (11) :1752-1755

[9] Millikelvin magneto-optical studies of two-dimensional hole systems [J].

Ponomarev, YV ;

Usher, A ;

Rodgers, PJ ;

Gallagher, BL ;

Henini, M ;

Hill, G .

PHYSICAL REVIEW B, 1996, 54 (19) :13891-13898

[10] DETERMINATION OF THE BINDING-ENERGY OF EXCITONS TO NEUTRAL DONORS LOCATED AT THE CENTER OR EDGE OF THE WELL OR AT THE CENTER OF THE BARRIER IN ALXGA1-XAS/GAAS MULTIPLE-QUANTUM-WELL STRUCTURES [J].

REYNOLDS, DC ;

LEAK, CE ;

BAJAJ, KK ;

STUTZ, CE ;

JONES, RL ;

EVANS, KR ;

YU, PW ;

THEIS, WM .

PHYSICAL REVIEW B, 1989, 40 (09) :6210-6217

← 1 2 →