Turn-off characteristics of 1000 V SiC gate-turn-off thyristors

被引：8

作者：

Seshadri, S ^{[1
]}

Casady, JB ^{[1
]}

Agarwal, AK ^{[1
]}

Siergiej, RR ^{[1
]}

Rowland, LB ^{[1
]}

Sanger, PA ^{[1
]}

Brandt, CD ^{[1
]}

Barrow, J ^{[1
]}

Piccone, D ^{[1
]}

Rodrigues, R ^{[1
]}

Hansen, T ^{[1
]}

机构：

[1] Northrop Grumman Corp, ESSD, STC, Pittsburgh, PA USA

来源：

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 1998年

关键词：

D O I：

10.1109/ISPSD.1998.702653

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

10 A/similar to 175 V switching has been achieved using SiC GTOs. A 3 A/350 V package demonstrated 130 ns and 55 ns rise and fall times with turn-off losses of 3.2 mu J. Switching times increased by similar to 3x at 250 degrees C. Devices exhibited a dV/dt limit of 700 V/mu s. MOS-gated turn-off of 2 A/100 V is also demonstrated for the first time using a SiC GTO and Si MOSFET in a hybrid MTO(TM) configuration.

引用

页码：131 / 134

页数：4