Mapping detector response over the area of a CdZnTe-multiple-electrode detector

被引：1

作者：

Lingren, CL ^{[1
]}

Apotovsky, B ^{[1
]}

Butler, JF ^{[1
]}

Doty, FP ^{[1
]}

Friesenhahn, SJ ^{[1
]}

Oganesyan, A ^{[1
]}

Pi, B ^{[1
]}

Zhao, S ^{[1
]}

机构：

[1] Digirad Corp, San Diego, CA 92121 USA

来源：

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II | 1997年 / 487卷

关键词：

D O I：

10.1557/PROC-487-263

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semiconductor multiple-electrode detectors have been developed for the purpose of reducing effects of hole trapping in room-temperature radiation detectors.(1,2) Some reported geometries maintain a nearly-uniform electric field inside the detector, but others generate an electric field that is very non-uniform and highly-concentrated at the anode. This paper reports the results of mapping such a detector (having a non-uniform electric field) with a finely collimated gamma-ray beam to determine the detector response as a function of position.

引用

页码：263 / 266

页数：4