Photonic band-gap properties of a porous silicon periodic planar waveguide

被引：28

作者：

Ferrand, P ^{[1
]}

Romestain, R ^{[1
]}

Vial, JC ^{[1
]}

机构：

[1] Univ Grenoble 1, Spectrometrie Phys Lab, CNRS, UMR 5588, F-38402 St Martin Dheres, France

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.63.115106

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have elaborated a photonic band-gap structure based on nanoporous silicon, structured both in depth and in plane with a 0.45-mum period. Near infrared continuous transmittance spectra, compared to calculations performed by means of a coupled-mode theory, allow quantitative measurements of the optical index both in the plane and in depth, and demonstrate that the final material index is modulated up to Deltan=0.5. Wide (Delta lambda/lambda approximate to0.1 in TM, 0.05 in TE) and efficient stop bands are measured. They are attributed to a strong selectivity at the edge coupling.

引用

页数：3

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