Study of substrate diffusion in epitaxial N-type CdSe films grown on GaAs (001) by pulsed laser ablation

被引：6

作者：

Park, J ^{[1
]}

Rouleau, CM ^{[1
]}

Lowndes, DH ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA

来源：

ADVANCES IN LASER ABLATION OF MATERIALS | 1998年 / 526卷

关键词：

D O I：

10.1557/PROC-526-27

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

N-type CdSe films with thicknesses of 470 - 630 nm were grown on (001) and 2 degrees- miscut GaAs wafers by ArF (193 nm) pulsed laser ablation of stoichiometric CdSe targets;It platen temperatures (T-p) of 250 - 425 degrees C in vacuum and ambient Ar gas. Film-substrate interdiffusion was studied with Auger depth profiling, as well as energy dispersive x-ray fluorescent spectroscopy (EDS). Both techniques showed that extensive interdiffusion took place at the film-substrate interface for CdSe films grown at T-p greater than or equal to 355 degrees C but was greatly reduced at T-p=250 degrees C. Tilting the substrate to be approximately parallel to the ablation plume as well as decreasing the ambient gas pressure also reduced film-substrate interdiffusion.

引用

页码：27 / 32

页数：6