Characteristics of e-beam deposited electrochromic CeO2 thin films

被引：75

作者：

Porqueras, I ^{[1
]}

Person, C ^{[1
]}

Corbella, C ^{[1
]}

Vives, M ^{[1
]}

Pinyol, A ^{[1
]}

Bertan, E ^{[1
]}

机构：

[1] Univ Barcelona, Dept Fis Aplicada & Opt, FEMAN, E-08028 Barcelona, Spain

来源：

SOLID STATE IONICS | 2003年 / 165卷 / 1-4期

关键词：

cerium oxide; e-beam deposition; ion bombardment; ion storage; electro-chromic layer;

D O I：

10.1016/j.ssi.2003.08.025

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cerium oxide (CeO2) thin films were deposited by e-beam PVD on various substrates, such as glass, ITO-coated glass, Si wafers and fused silica. Substrate temperature was kept constant at 125degreesC for all samples. The technological parameters of interest were oxygen partial pressure and plasma assistance during the deposition process. The basic structural properties of these films were studied by XRD, transmission electron microscopy (TEM) and selected area electron diffraction (SAED). Composition of the samples was evaluated by X-ray photoelectron spectroscopy (XPS) and infrared transmittance (FTIR). The samples were optically characterized in the Ultraviolet-visible (UV-VIS) range (190-900 nm). The electrochromic properties of CeO2 were characterized using a lithium-based electrolyte. This paper assesses the feasibility of using pure CeO2 thin films as ion-storage layers in all-solid inorganic electrochromic devices. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：131 / 137

页数：7

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