Excitation intensity dependence of the near band-edge photoluminescence spectra of CuInTe2 at 4.2 K

被引：12

作者：

Rincon, C ^{[1
]}

Wasim, SM

Hernandez, E

Bacquet, G

机构：

[1] Univ Los Andes, Fac Ciencias, Dept Fis, Ctr Estudios Semicond, Merida, Venezuela

[2] Univ Zulia, Fac Ciencias Expt, Dept Fis, Maracaibo 4011, Venezuela

[3] Inst Natl Sci Appl, Phys Solides Lab, F-31077 Toulouse, France

来源：

MATERIALS LETTERS | 1998年 / 35卷 / 3-4期

关键词：

CuInTe2; ternary semiconductor; photoluminescence; excitation intensity; free and bound excitons; donor-acceptor pairs;

D O I：

10.1016/S0167-577X(97)00250-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence study as a function of excitation intensity has been performed in CuInTe2 at 4.2 K. From the analysis of the data, using the current theoretical models, all the emission lines observed in the PL spectra have been identified: These are due to free-exciton (1.053 eV), bound-excitons (1.047, 1.044, 1.040 and 1.030 eV), donor-to-acceptor (1.022 and 1.017 eV) and donor-to-valence band (1.033 eV) recombination processes. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：172 / 176

页数：5

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