Resonant Raman scattering in polycrystalline silicon thin films

In this letter, we report the results obtained on polycrystalline silicon thin films using Raman spectrometry in resonance with the silicon direct band gap. First, we show that accurate information about crystallites can be obtained in these experimental conditions, without any deconvolution of Raman spectra. Second, we apply the technique to estimate the mechanical stress of polycrystalline silicon thin films. (C) 1998 American Institute of Physics.