High-filling-fraction inverted ZnS opals fabricated by atomic layer deposition

被引：79

作者：

King, JS ^{[1
]}

Neff, CW

Summers, CJ

Park, W

Blomquist, S

Forsythe, E

Morton, D

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] Univ Colorado, Dept Elect & Comp Engn, Boulder, CO 80309 USA

[3] USA, Res Lab, Adelphi, MD 20783 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 13期

关键词：

D O I：

10.1063/1.1609240

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The infiltration of three-dimensional opal structures has been investigated by atomic layer deposition. Demonstrations using ZnS:Mn show that filling fractions >95% can be achieved and that the infiltrated material is of high-quality crystalline material as assessed by photoluminescence measurements. These results demonstrate a flexible and practical pathway to attaining high-performance photonic crystal structures and optical microcavities. (C) 2003 American Institute of Physics.

引用

页码：2566 / 2568

页数：3

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