Characterization of ion/electron beam induced deposition of electrical contacts at the sub-μm scale

被引：16

作者：

Brunel, D. ^{[1
]}

Troadec, D. ^{[1
]}

Hourlier, D. ^{[1
]}

Deresmes, D. ^{[1
]}

Zdrojek, M. ^{[2
]}

Melin, T. ^{[1
]}

机构：

[1] CNRS, Inst Elect Microelect & Nanotechnol, UMR 8520, F-59652 Villeneuve Dascq, France

[2] Warsaw Univ Technol, Fac Phys, PL-00662 Warsaw, Poland

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 07期

关键词：

FIB; Electron beam induced deposition; Ion beam induced deposition; Transport measurements; Four probe measurements; Carbon nanotube; DIRECT-WRITE NANOLITHOGRAPHY; CARBON NANOTUBE TRANSISTORS; NANOWIRES;

D O I：

10.1016/j.mee.2011.03.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the fabrication of electrical contacts using ion- and electron-beam induced deposition of platinum at the sub-mu m scale. Halos associated with the metal surface decoration are characterized electrically in the 0.05-2 mu m range using transport measurements, conducting atomic force microscopy and Kelvin probe microscopy. In contrast with IBID, EBID electrodes are shown to exhibit a low leakage resistance (above 1 M Omega) at the sub-100 nm scale, and are thus suitable to achieve resist-free electrical contacts for transport measurements on nanostructures. Four-point transport data using mu m-spaced EBID contacts are provided for a multiwalled carbon nanotube. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1569 / 1572

页数：4

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