Thermoelectric clathrates

被引：19

作者：

Nolas, GS

Slack, GA

机构：

[1] Marlow Ind, Dallas, TX 75238 USA

[2] Rensselaer Polytech Inst, Dept Phys, Troy, NY 12180 USA

来源：

AMERICAN SCIENTIST | 2001年 / 89卷 / 02期

关键词：

D O I：

10.1511/2001.2.136

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：136 / 141

页数：6

共 12 条

[1] Structural disorder and thermal conductivity of the semiconducting clathrate Sr8Ga16Ge30 [J].

Chakoumakos, BC ;

Sales, BC ;

Mandrus, DG ;

Nolas, GS .

JOURNAL OF ALLOYS AND COMPOUNDS, 2000, 296 (1-2) :80-86

[2] Glasslike heat conduction in high-mobility crystalline semiconductors [J].

Cohn, JL ;

Nolas, GS ;

Fessatidis, V ;

Metcalf, TH ;

Slack, GA .

PHYSICAL REVIEW LETTERS, 1999, 82 (04) :779-782

[3] Thermoelectric cooling and power generation [J].

DiSalvo, FJ .

SCIENCE, 1999, 285 (5428) :703-706

[4] Thermoelectric materials: New approaches to an old problem [J].

Mahan, G ;

Sales, B ;

Sharp, J .

PHYSICS TODAY, 1997, 50 (03) :42-47

[5] Threefold enhancement of the thermoelectric figure of merit for pressure tuned Sr8Ga16Ge30 [J].

Meng, JF ;

Shekar, NVC ;

Badding, JV ;

Nolas, GS .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (03) :1730-1733

[6] High figure of merit in partially filled ytterbium skutterudite materials [J].

Nolas, GS ;

Kaeser, M ;

Littleton, RT ;

Tritt, TM .

APPLIED PHYSICS LETTERS, 2000, 77 (12) :1855-1857

[7] Semiconducting Ge clathrates: Promising candidates for thermoelectric applications [J].

Nolas, GS ;

Cohn, JL ;

Slack, GA ;

Schujman, SB .

APPLIED PHYSICS LETTERS, 1998, 73 (02) :178-180

[8] The effect of rare-earth filling on the lattice thermal conductivity of skutterudites [J].

Nolas, GS ;

Slack, GA ;

Morelli, DT ;

Tritt, TM ;

Ehrlich, AC .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) :4002-4008

[9] Skutterudites: A phonon-glass-electron crystal approach to advanced thermoelectric energy conversion applications [J].

Nolas, GS ;

Morelli, DT ;

Tritt, TM .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1999, 29 :89-116

[10]

Nolas GS, 2001, SEMICONDUCT SEMIMET, V69, P255

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