Crystal ion-slicing of magnetic and ferroelectric oxide films
被引:2
作者:
Levy, M
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h-index: 0
机构:
Columbia Univ, Dept Appl Phys, New York, NY 10027 USAColumbia Univ, Dept Appl Phys, New York, NY 10027 USA
Levy, M
[1
]
Osgood, RM
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h-index: 0
机构:
Columbia Univ, Dept Appl Phys, New York, NY 10027 USAColumbia Univ, Dept Appl Phys, New York, NY 10027 USA
Osgood, RM
[1
]
Kumar, A
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h-index: 0
机构:
Columbia Univ, Dept Appl Phys, New York, NY 10027 USAColumbia Univ, Dept Appl Phys, New York, NY 10027 USA
Kumar, A
[1
]
Bakhru, H
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h-index: 0
机构:
Columbia Univ, Dept Appl Phys, New York, NY 10027 USAColumbia Univ, Dept Appl Phys, New York, NY 10027 USA
Bakhru, H
[1
]
Liu, R
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h-index: 0
机构:
Columbia Univ, Dept Appl Phys, New York, NY 10027 USAColumbia Univ, Dept Appl Phys, New York, NY 10027 USA
Liu, R
[1
]
Cross, E
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h-index: 0
机构:
Columbia Univ, Dept Appl Phys, New York, NY 10027 USAColumbia Univ, Dept Appl Phys, New York, NY 10027 USA
Cross, E
[1
]
机构:
[1] Columbia Univ, Dept Appl Phys, New York, NY 10027 USA
来源:
HIGH-DENSITY MAGNETIC RECORDING AND INTEGRATED MAGNETO-OPTICS: MATERIALS AND DEVICES
|
1998年
/
517卷
关键词:
D O I:
10.1557/PROC-517-475
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The epitaxial separation of single-crystal magnetic and ferroelectric oxide films is presented. Ion implantation is used to create a buried damage layer beneath the surface. The high etch-selectivity of this sacrificial layer makes it possible to detach high quality single-crystal films from bulk samples. Magnetic and electrical properties of the films are discussed.