Crystal ion-slicing of magnetic and ferroelectric oxide films

被引:2
作者
Levy, M [1 ]
Osgood, RM [1 ]
Kumar, A [1 ]
Bakhru, H [1 ]
Liu, R [1 ]
Cross, E [1 ]
机构
[1] Columbia Univ, Dept Appl Phys, New York, NY 10027 USA
来源
HIGH-DENSITY MAGNETIC RECORDING AND INTEGRATED MAGNETO-OPTICS: MATERIALS AND DEVICES | 1998年 / 517卷
关键词
D O I
10.1557/PROC-517-475
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The epitaxial separation of single-crystal magnetic and ferroelectric oxide films is presented. Ion implantation is used to create a buried damage layer beneath the surface. The high etch-selectivity of this sacrificial layer makes it possible to detach high quality single-crystal films from bulk samples. Magnetic and electrical properties of the films are discussed.
引用
收藏
页码:475 / 479
页数:5
相关论文
empty
未找到相关数据