A CMOS process-compatible wet-etching recipe for the high-k gate dielectrics Pr2O3 and Pr2-xTixO3

被引：21

作者：

Mane, AU ^{[1
]}

Wenger, C ^{[1
]}

Schroeder, T ^{[1
]}

Zaumseil, P ^{[1
]}

Lippert, G ^{[1
]}

Weidner, G ^{[1
]}

Müssig, HJ ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Oder, Germany

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2005年 / 152卷 / 06期

关键词：

D O I：

10.1149/1.1914751

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The fabrication of complementary metal oxide semiconductor (CMOS) structures with praseodymium oxide (Pr2O3) or titanium-doped praseodymium oxide (Pr2-xTixO3) (0 <= x <= 1) layers as integrated high-k gate dielectrics requires the development of a process-compatible etching recipe. Different wet-etching processes in acid-based chemistry were evaluated and solutions of diluted sulfuric acid were identified as suitable etchants for Pr2O3 and Pr2-xTixO3 layers on Si substrates. Metal-oxide-semiconductor stacks with poly-Si as the potential gate electrode were patterned with the help of tetramethyl ammonium hydroxide as the selective etchant attacking the poly-Si gate electrode material but not the underlying Pr-based high-k gate dielectric layers. (c) 2005 The Electrochemical Society.

引用

页码：C399 / C402

页数：4

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