Characterization of anodic oxide film formed on TiN coating in neutral borate buffer solution

被引：22

作者：

Azumi, K

Watanabe, S

Seo, M

Saeki, I

Inokuchi, Y

James, P

Smyrl, WH

机构：

[1] Hokkaido Univ, Grad Sch Engn, Kita Ku, Sapporo, Hokkaido 060, Japan

[2] Kawasaki Steel Corp, Tech Res Div, Chiba 260, Japan

[3] Univ Minnesota, Corros Res Ctr, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

来源：

CORROSION SCIENCE | 1998年 / 40卷 / 08期

关键词：

TiN; anodic oxide film; FT-IR; photocurrent; impedance;

D O I：

10.1016/S0010-938X(98)00031-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Properties of the oxide layer formed on a TiN coating by anodic oxidation in neutral borate buffer solution were investigated using cyclic voltammetry, AFM, FT-IR, impedance and photocurrent measurements. The voltammogram showed imperfections in the TiN coating and high susceptibility of anodic oxidation. The result of FT-IR showed the composition of an oxide layer, similar to TiO2, including OH- or water. Both impedance and photocurrent results confirmed that the oxide film has n-type semiconductor properties. The oxide would contain defects acting as intergap states, resulting in low efficiency of photo-induced free-carrier generation. It seems that these defects have their origin in degradation of the protective property of a TiN coating under anodic polarization. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1363 / 1377

页数：15

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