Vacancy-phosphorus complexes in strained Si1-xGex:: Structure and stability -: art. no. 115307

被引:38
作者
Sihto, SL
Slotte, J
Lento, J
Saarinen, K
Monakhov, EV
Kuznetsov, AY
Svensson, BG
机构
[1] Helsinki Univ Technol, Phys Lab, FIN-02015 Helsinki, Finland
[2] Univ Oslo, Dept Phys, N-0316 Oslo, Norway
来源
PHYSICAL REVIEW B | 2003年 / 68卷 / 11期
关键词
D O I
10.1103/PhysRevB.68.115307
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have used positron annihilation spectroscopy to study vacancy-type defects in strained phosphorus doped Si1-xGex layers grown on Si substrates and irradiated with 2-MeV protons. The results show that the dominant defect in the SiGe layer after irradiation is the E center, the vacancy-phosphorus pair. When the sample is annealed at 150-175 degreesC, the dominant defect species in the SiGe layer changes into a complex consisting of a vacancy, a phosphorus dopant, and a germanium atom (V-P-Ge complex). Furthermore, we observe that the total concentration of vacancy-type defect complexes before and after annealing remains approximately constant. We thus conclude that the V-P-Ge complex is formed when a migrating E center encounters a Ge atom and forms the V-P-Ge complex. The V-P-Ge complex anneals out at 200 degreesC. The 50 degreesC higher annealing temperature of the V-P-Ge complex corresponds to about 0.1-0.2 eV larger binding energy than that of the V-P pair. By ab initio calculations, we reproduce this value and confirm that the V-P pair is more stable when neighbored by a germanium atom.
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页数:10
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