Raman study of Cs3C60 under ambient pressure

被引:10
作者
Kubozono, Y [1 ]
Fujiki, S
Hiraoka, K
Urakawa, T
Takabayashi, Y
Kashino, S
Iwasa, Y
Kitagawa, H
Mitani, Y
机构
[1] Okayama Univ, Dept Chem, Okayama 7008530, Japan
[2] Japan Adv Inst Sci & Technol, Tatsunokuchi, Ishikawa 9231292, Japan
关键词
D O I
10.1016/S0009-2614(98)01220-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Temperature dependence of Raman scattering in a pressure-induced superconductor Cs3C60 was studied under ambient pressure between 2 and 290 K. The contributions of the intramolecular vibration modes to electron-phonon coupling were evaluated by comparing the linewidths of the modes in Cs3C60 with those in pristine C-60. The total electron-phonon coupling constant lambda was approximate to 0.18, approximately one-third of the values for Rb3C60 and K3C60. Temperature-dependent Raman scattering in the superconductor Rb3C60 and a non-superconductor Rb6C60 was also measured for comparison. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:335 / 340
页数:6
相关论文
共 12 条
[1]   RAMAN-SCATTERING IN HIGH-TC SUPERCONDUCTORS [J].
CARDONA, M .
PHYSICA C, 1991, 185 :65-71
[2]   Cs4C60:: single phase synthesis and orientational order [J].
Dahlke, P ;
Henry, PF ;
Rosseinsky, MJ .
JOURNAL OF MATERIALS CHEMISTRY, 1998, 8 (07) :1571-1576
[3]   OPTICAL-RESPONSE OF THE SUPERCONDUCTING STATE OF K3C60 AND RB3C60 [J].
DEGIORGI, L ;
WACHTER, P ;
GRUNER, G ;
HUANG, SM ;
WILEY, J ;
KANER, RB .
PHYSICAL REVIEW LETTERS, 1992, 69 (20) :2987-2990
[4]  
KUBOZONO Y, UNPUB
[5]   RAMAN-SCATTERING AND ELECTRON-PHONON COUPLING IN RBXC60 [J].
MITCH, MG ;
CHASE, SJ ;
LANNIN, JS .
PHYSICAL REVIEW LETTERS, 1992, 68 (06) :883-886
[6]  
PALSTRA TTM, 1995, SOLID STATE COMMUN, V93, P327, DOI 10.1016/0038-1098(94)00786-1
[7]   ELECTRON-PHONON COUPLING AND SUPERCONDUCTIVITY IN ALKALI-INTERCALATED C60 SOLID [J].
SCHLUTER, M ;
LANNOO, M ;
NEEDELS, M ;
BARAFF, GA ;
TOMANEK, D .
PHYSICAL REVIEW LETTERS, 1992, 68 (04) :526-529
[8]   PRESSURE AND FIELD-DEPENDENCE OF SUPERCONDUCTIVITY IN RB3C60 [J].
SPARN, G ;
THOMPSON, JD ;
WHETTEN, RL ;
HUANG, SM ;
KANER, RB ;
DIEDERICH, F ;
GRUNER, G ;
HOLCZER, K .
PHYSICAL REVIEW LETTERS, 1992, 68 (08) :1228-1231
[9]  
Taliani C., 1993, Electronic Properties of Fullerenes. Proceedings of the International Winterschool on Electronic Properties of Novel Materials, P259
[10]  
VERMA CM, 1991, SCIENCE, V254, P989