Observation of reduced (1x1) terraces on WO3(001) surfaces using scanning tunnelling microscopy

被引:36
作者
Jones, FH
Dixon, RA
Brown, A
机构
[1] New Chemistry Laboratory, University of Oxford, Oxford OX1 3QR, South Parks Road
基金
英国工程与自然科学研究理事会;
关键词
ion bombardment; low index single crystal surfaces; scanning tunneling microscopy; semiconducting surfaces; surface defects; surface relaxation and reconstruction; tungsten oxide;
D O I
10.1016/S0039-6028(96)00900-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ordered (1 x 1) terraces on a WO3(001) surface have been resolved using scanning tunnelling microscopy. (1 x 1) surfaces were observed after sample treatments involving both simple vacuum annealing and argon ion bombardment/anneal cycles. The (1 x 1) surface was observed to coexist with (2 x 2) and (root 2 x root 2)R45 degrees reconstructed areas of the surface. The (root 2 x root 2)R45 degrees reconstruction was only amenable to imaging at positive sample biases (i.e. under tunnelling into empty sample states), as is commonly expected for n-type semiconducting transition metal oxides. In contrast, both the (1 x 1) and (2 x 2) reconstructions have been imaged at negative sample biases (tunnelling from filled sample states) as well as at positive bias. These observations suggest that the (1 x 1) reconstruction arises from termination of the bulk structure in a bare WO2 plane in which all the W ions are reduced from W(VI) to W(V).
引用
收藏
页码:343 / 350
页数:8
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