Correlation between scattering behaviour of HCP single crystals and incorporated dislocation arrangement quantified by the Fourier transformation

A new approach is proposed for studying the diffraction intensity distribution of the single crystals with nearly parallel dislocations. This approach can be directly applied on the realistic dislocation configurations in the crystals which can be made visible as etching-pits by proper etching procedures. The displacement field is estimated by the superposition of the displacements from all the dislocations. The diffraction behaviour on the plane which is perpendicular to those dislocations is determined by a Fourier transformation algorithms.