Photoresist development modeling based on continuity equations

被引:4
作者
Zhu, YQ
Capodieci, L
Cerrina, F
机构
来源
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIV | 1997年 / 3049卷
关键词
resist; development process; continuity equation; modeling;
D O I
10.1117/12.275819
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we propose a model to simulate photoresist development based on continuity equations. In the resist dissolution process, to consider different components (Developer, Resist, Reaction By-product ect.), each component's local concentration is described by the continuity equation. The resist development process is viewed as the diffusion-reaction process of all components involved in the dissolution process. A simulation program has been written based on the above concept. The simulation for different previous existing models are discussed.
引用
收藏
页码:201 / 211
页数:11
相关论文
empty
未找到相关数据