Reactivity and kinetic parameters of UVIIHS

被引:4
作者
Wallraff, GM
Opitz, J
Hinsberg, W
Houle, F
Thackeray, J
Fedynyshyn, T
Kang, D
Rajaratnam, M
机构
来源
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIV | 1997年 / 3049卷
关键词
kinetics; stochastic simulation; pKa;
D O I
10.1117/12.275851
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The ''developable'' chemical image generated in chemically amplified DW resists if only indirectly related to the photochemical image generated on exposure. As a consequence the factors which ultimately affect the performance of the resist are determined by the thermally activated reactions occurring after the exposure step, For this reason it is important to understand the details of this chemistry in order to understand time effects that changes in formulation and process conditions have on factors such as linewidth and process latitude. in this report we describe studies on the deprotection reactions which occur in films of UVIIHS during the post exposure bake step. Experimentally measured deprotection rare data will be compared to simulations employing a stochastic mechanism simulator.
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页码:492 / 500
页数:9
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