Soft-solution process of Fe-Tb-O films for use in high frequency micromagnetic devices

被引：7

作者：

Lim, PB ^{[1
]}

Yamada, K

Inoue, M

Arai, K

Izaki, M

Fujii, T

机构：

[1] Saitama Univ, Dept Funct Mat Sci, Urawa, Saitama 3388570, Japan

[2] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan

[3] Osaka Municipal Tech Res Inst, Dept Inorgan Chem, Osaka 5368553, Japan

[4] Toyohashi Univ Technol, Dept Elect & Elect Engn, Aichi 4418580, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 08期

关键词：

D O I：

10.1063/1.369064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An attempt for fabricating Fe-Tb-O films with heterogranular structures was made using a soft-solution process with an alternative current for deposition. The resultant film composition was found to be sensitive to the concentration of complex agent, KNaC4H4O6, the intensity i, and the frequency f of deposition current. These dependencies are well explained from the model for film formation. When KNaC4H4O6 = 283.47 mM, i = 6.7 mA/cm(2), and f = 6 mHz, the film with very high Tb content exceeding 29 at. % were obtained, which exhibited a relatively soft magnetic magnetization of H-c = 29 Oe and M-r/M-s = 0.93. (C) 1999 American Institute of Physics. [S0021-8979(99)77708-X].

引用

页码：6007 / 6009

页数：3