Growth of La2-xSrxCuO4 single-crystalline films by liquid phase epitaxial technique

被引：8

作者：

Tanabe, H ^{[1
]}

Tanaka, I ^{[1
]}

Watauchi, S ^{[1
]}

Kojima, H ^{[1
]}

机构：

[1] Yamanashi Univ, Fac Engn, Inst Inorgan Synth, Kofu, Yamanashi 4008511, Japan

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 1999年 / 315卷 / 3-4期

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

liquid phase epitaxy; magnetization; thin films; single-crystal growth; substitution effects; cuprate superconductor;

D O I：

10.1016/S0921-4534(99)00206-3

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-crystalline films of La2-xSrxCuO4 were prepared on nonsuperconducting substrates of Zn-doped La2CuO4 single crystals by the liquid phase epitaxial (LPE) technique. The La2-xSrxCuO4 single-crystalline films, less than 50 mu m thick, were subgrain- and crack-free. The Sr content of the La2-xSrxCuO4 films was determined to be 0.07-0.11, but the films were contaminated with less than 3 at.% aluminum as a result of the use of alumina crucibles. Some of the La2-xSrxCuO4 films exhibited superconductivity with T-conset approximate to 30 K and Delta T-c approximate to 20 K. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：154 / 158

页数：5

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