Enhancement of critical current density and flux pinning in Bi-2212 thick films due to MgO addition

被引:3
作者
Ni, BR [1 ]
Kiuchi, M
Otabe, ES
机构
[1] Fukuoka Inst Technol, Fac Engn, Fukuoka 8110295, Japan
[2] Kyushu Inst Technol, Fac Comp Sci & Syst Engn, Iizuka, Fukuoka 8208502, Japan
关键词
Bi-2212 thick film; critical current density; flux pinning; Ni substrate;
D O I
10.1109/TASC.2003.812518
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In order to substitute cheaper sheath materials for Ag, Bi-2212 superconducting thick films grown on oxidized Ni substrates were prepared by using a normal partial melt process. 0-5 vol% of fine MgO particles were doped in Bi-2212 phase during the fabrication for the purpose of enhancement of the critical current density (J(c)) in Bi-2212. The samples were analyzed with the assistances of X-ray diffractometer (XRD) and electron probe microanalyzer (EPMA). The critical temperature and J(c) were measured by using the conventional resistive method (4-probe method). An apparent improvement in J(c) characteristic was observed in the samples with fine MgO particles doped. The J(c) value in the 5 vol% MgO doped sample reached to the level comparable with that in other Ag-sheathed samples. Furthermore, the irreversibility field was confirmed to be largely enhanced by the addition of MgO particles. The pin parameters derived from the scaling behavior of pinning force density turned out to be similar to those predicted in the case of normal precipitate flux pinning, indicating that MgO particles in Bi-2212 act as effective pinning centers.
引用
收藏
页码:3695 / 3698
页数:4
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