Preparation and characterization of flash evaporated tin selenide thin films

被引：60

作者：

Chandra, G. Hema ^{[1
]}

Kumar, J. Naveen

Rao, N. Madhusudhana

Uthanna, S.

机构：

[1] Vellore Inst Technol, Dept Phys, Thin Film Lab, Vellore 632014, Tamil Nadu, India

[2] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 306卷 / 01期

关键词：

characterization; X-ray diffraction; physical vapor deposition processes; thin film; optoelectronic devices;

D O I：

10.1016/j.jcrysgro.2007.05.004

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Tin selenide thin films were grown by flash evaporation method at substrate temperatures, T-S = 303-513 K at an interval of 30 K. Single phase, nearly stoichiometric and polycrystalline films with strong (400) orientation exhibiting orthorhombic structure was observed at the substrate temperature of 513K. The optical absorption studies indicated a direct band gap of 1.26eV with high absorption coefficient (> 10(4) cm(-1)) near the fundamental absorption edge. The films were found to have an electrical resistivity 8.1 Omega cm with p-type conduction. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：68 / 74

页数：7

共 29 条

[1]

[Anonymous], VACUUM TECHNOLOGY

[2] OVONIC TYPE SWITCHING IN TIN SELENIDE THIN-FILMS [J].

BAXTER, CR ;

MCLENNAN, WD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :110-113

[3] FAR ULTRAVIOLET PHOTOELECTRIC STUDY OF THIN SNSE EVAPORATED-FILMS [J].

BENNOUNA, A ;

TESSIER, PY ;

PRIOL, M ;

TRAN, QD ;

ROBIN, S .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 117 (01) :51-56

[4] SNSE THIN-FILMS SYNTHESIZED BY SOLID-STATE REACTIONS [J].

DANG, TQ .

THIN SOLID FILMS, 1987, 149 (02) :197-203

[5] ELECTRICAL-PROPERTIES AND OPTICAL-ABSORPTION OF SNSE EVAPORATED THIN-FILMS [J].

DANG, TQ .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 86 (01) :421-426

[6] TIN SELENIDE (SNSE) THIN-FILMS PREPARED BY REACTIVE EVAPORATION [J].

JOHN, KJ ;

PRADEEP, B ;

MATHAI, E .

JOURNAL OF MATERIALS SCIENCE, 1994, 29 (06) :1581-1583

[7] Electrochemical formation of nanometric layers of tin selenides on Ti surface [J].

Lukinskas, A. ;

Jasulaitiene, V. ;

Lukinskas, R. ;

Savickaja, I. ;

Kalinauskas, P. .

ELECTROCHIMICA ACTA, 2006, 51 (27) :6171-6178

[8]

Padiyan DP, 2000, CRYST RES TECHNOL, V35, P949, DOI 10.1002/1521-4079(200008)35:8<949::AID-CRAT949>3.0.CO

[9]

2-R

[10] THEORY OF PHOTOCONDUCTIVITY IN SEMICONDUCTOR FILMS [J].

PETRITZ, RL .

PHYSICAL REVIEW, 1956, 104 (06) :1508-1516

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