Design for millimeter-wave applications in silicon technologies (Session invited)

被引：19

作者：

Cathelin, Andreia ^{[1
]}

Martineau, B. ^{[1
,2
]}

Seller, N. ^{[1
,3
]}

Douyere, S. ^{[1
]}

Gorisse, J. ^{[1
,2
]}

Pruvost, S. ^{[1
]}

Raynaud, Ch. ^{[1
,4
]}

Gianesello, F. ^{[1
]}

Montusclat, S. ^{[1
]}

Voinigescu, S. P. ^{[5
]}

Niknejad, A. M. ^{[6
]}

Belot, D. ^{[1
]}

Schoellkopf, J. P. ^{[1
]}

机构：

[1] FTM, STMicroelect, F-38926 Crolles, France

[2] IEMN, F-59662 Villeneuve, France

[3] IMS Lab, F-33405 Talence, France

[4] CEA LETI, F-38000 Grenoble, France

[5] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

[6] Univ Calif Berkeley, BWRC, Berkeley, CA 94704 USA

来源：

ESSCIRC 2007: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE CIRCUITS CONFERENCE | 2007年

关键词：

D O I：

10.1109/ESSCIRC.2007.4430343

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the potentialities of advanced BiCMOS and CMOS technologies for millimeter-wave applications. To begin, the target applications in these frequency bands are presented: from automotive cruise control radars to wireless links. Then, a large overview of the technological offer to address these applications is presented: SiGe BiCMOS, nanometer bulk and SOI CMOS technologies. This work focuses both on active and passive devices (BEOL) behavior to suit for design above 20GHz. The paper continues with a presentation of several solutions for integrated circuits on the presented topic: front-end receiver blocks, transmission blocks and frequency synthesis solutions. An overview of state of the art silicon circuits is given. As a conclusion, perspectives regarding future challenges in terms of system integration and applications are discussed.

引用

页码：464 / +

页数：3

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