The microstructure and electrical transport properties of immiscible copper-niobium alloy thin films

被引:15
作者
Banerjee, Rajarshi [1 ]
Bose, Sangita [2 ]
Genc, Arda [3 ]
Ayyub, Pushan [2 ]
机构
[1] Univ N Texas, Dept Mat Sci & Engn, Denton, TX 76203 USA
[2] Tata Inst Fundamental Res, Dept Condensed Matter Phys & Mat Sci, Bombay 400005, Maharashtra, India
[3] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA
关键词
D O I
10.1063/1.2836970
中图分类号
O59 [应用物理学];
学科分类号
摘要
Mutually immiscible in the solid state, copper and niobium exhibit a relatively strong clustering (phase separating) tendency in the liquid state and can therefore only be alloyed in a highly metastable form: for example, by vapor quenching. We have deposited metastable Cu-Nb alloy thin films with nominal compositions ranging from 5 to 90 at. % Nb by magnetron cosputtering. The microstructure of these films depends strongly on the composition and ranges from coarse-grained solid solutions for Cu-rich and Nb-rich compositions to phase-separated amorphous mixtures when the two elements are in comparable amounts. The crystalline Cu- or Nb-rich compositions exhibit positive temperature coefficients of resistivity (TCR) with the Cu-90 at. % Nb film exhibiting a superconducting transition with (T(C))(onset)similar to 4.5 K. The amorphous films show high room temperature resistivity, a negative TCR, and composition dependent superconducting transitions. We investigate the relation between the microstructure, phase stability, and the electrical transport properties. (c) 2008 American Institute of Physics.
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页数:7
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