Enhancing Anisotropy Barriers of Dysprosium(III) Single-Ion Magnets

被引：225

作者：

Chen, Gong-Jun ^{[1
]}

Guo, Yun-Nan ^{[2
]}

Tian, Jin-Lei ^{[1
]}

Tang, Jinkui ^{[2
]}

Gu, Wen ^{[1
]}

Liu, Xin ^{[1
]}

Yan, Shi-Ping ^{[1
]}

Cheng, Peng ^{[1
]}

Liao, Dai-Zheng ^{[1
]}

机构：

[1] Nankai Univ, Dept Chem, Tianjin 300071, Peoples R China

[2] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Rare Earth Resource Utilizat, Changchun 130022, Peoples R China

来源：

CHEMISTRY-A EUROPEAN JOURNAL | 2012年 / 18卷 / 09期

基金：

中国国家自然科学基金;

关键词：

dysprosium compounds; ligand effects; magnetic properties; relaxation dynamics; single-molecule magnets; MOLECULE MAGNETS; RELAXATION; MAGNETIZATION; COMPLEXES; LEVEL;

D O I：

10.1002/chem.201103816

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Magnetic personality: The incorporation of a bulky auxiliary ligand in β-diketone-based dysprosium(III) single-ion magnets (SIMs) remarkably increases the anisotropic barriers, representing a promising route toward the design of higher-anisotropic-barrier SIMs (see scheme). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2484 / 2487

页数：4

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