Electrical properties of p-type GaN:Mg codoped with oxygen

被引：89

作者：

Korotkov, RY ^{[1
]}

Gregie, JM

Wessels, BW

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Northwestern Univ, Engn & Mat Res Ctr, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 02期

关键词：

D O I：

10.1063/1.1335542

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Codoping of p-type GaN with Mg and oxygen was investigated. By codoping with oxygen the hole concentrations increased to 2 x 10(18) cm(-3) at 295 K, an order of magnitude greater than in Mg-doped epilayers. The resistivity of codoped layers decreased from 8 to 0.2 Ohm cm upon oxygen codoping. Variable temperature Hall effect measurements indicated that the acceptor activation energy decreases from 170 +/-5 meV in Mg-doped films to 135 +/-5 meV upon oxygen doping. The higher hole concentration results in part from a decrease in the ionization energy of the acceptor. (C) 2001 American Institute of Physics.

引用

页码：222 / 224

页数：3

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